Intel has been tinkering around with DRAM (Dynamic Random Access Memory) cells, reducing their size and getting rid of the capacitors that were necessary components of their tiny integrated circuit. In doing so, they may have demonstrated a way to remove the SRAM (Static Random Access Memory)cells from the processor and replace them with the simplified DRAM, greatly improving bandwith. Intel said that it was able to fine tune its DRAM design and hit a physical clock of 2 GHz using a 65 nm manufacturing process.<\/p>\n","protected":false},"excerpt":{"rendered":"
Intel has been tinkering around with DRAM (Dynamic Random Access Memory) cells, reducing their size and getting rid of the capacitors that were necessary components of their tiny integrated circuit. In doing so, they may have demonstrated a way to remove the SRAM (Static Random Access Memory)cells from the processor and replace them with the simplified DRAM, greatly improving bandwith. Intel said that it was able to fine tune its DRAM design and hit a physical clock of 2 GHz using a 65 nm manufacturing process. Continue reading