Solid-state memory is the future. Micron and Intel, working together, have brought us closer to that future with the announcement of a new flash memory architecture that more than doubles both read and write speeds for solid-state memory devices.IM Flash Technologies, a joint venture between Intel and Micron, has developed an 8G-bit SLC (single-level cell) high-speed NAND chip which can reach read speeds up to 200M bytes per second and write speeds of up to 100M bytes per second, which could mean<\/p>\n","protected":false},"excerpt":{"rendered":"
Solid-state memory is the future. Micron and Intel, working together, have brought us closer to that future with the announcement of a new flash memory architecture that more than doubles both read and write speeds for solid-state memory devices.IM Flash Technologies, a joint venture between Intel and Micron, has developed an 8G-bit SLC (single-level cell) high-speed NAND chip which can reach read speeds up to 200M bytes per second and write speeds of up to 100M bytes per second, which could mean Continue reading