In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology. GLOBALFOUNDRIES sent me an e-mail already this morning that states they plan to accept 28nm designs in 2H10 in Fab 1 in Dresden with production shortly thereafter. Looks like processors are about to get much smaller in the years to come. <\/p>\n
\nPreliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power all in a chip that is half the size compared with 45nm technology. The high-k metal gate implementation allows one of the industrys smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.<\/p>\n<\/blockquote>\n","protected":false},"excerpt":{"rendered":"
In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology. GLOBALFOUNDRIES sent me an e-mail already this morning that states they plan to accept 28nm designs in 2H10 in Fab 1 in Dresden with production shortly thereafter. Looks like processors are about to get much smaller in the years to come. <\/p>\n
\nPreliminary results working with early access clients and partners indicate that the 28nm technology platform can provide a 40 percent performance improvement and a more than 20 percent reduction in power all in a chip that is half the size compared with 45nm technology. The high-k metal gate implementation allows one of the industrys smallest SRAM cells at 0.120 square microns, with low minimum voltage operation and competitive performance, leakage and stability.<\/p>\n<\/blockquote>\n