SanDisk Corporation and Toshiba Corporation announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer (nm) process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction is expected to quickly bring to market advanced technologies that will enable greater capacities and reduce manufacturing costs for products ranging from memory cards to Solid State Drives (SSD). “The development of our third-generation 3-bits-per-cell technology